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  ? semiconductor components industries, llc, 2015 june, 2015 ? rev. 0 1 publication order number: ncp186/d ncp186 fast transient response low voltage 1 a ldo the ncp186x series are cmos ldo regulators featuring 1 a output current. the input voltage is as low as 1.8 v and the output voltage can be set from 1.2 v. features ? operating input voltage range: 1.8 v to 5.5 v ? output voltage range: 1.2 to 3.9 v ? quiescent current typ. 90  a ? low dropout: 100 mv typ. at 1 a, v out = 3.0 v ? high output voltage accuracy 1% ? stable with small 1  f ceramic capacitors ? over?current protection ? built?in soft start circuit to suppress inrush current ? thermal shutdown protection: 165 c ? with (ncp186a) and without (ncp186b) output discharge function ? available in small xdfn8 1.2 x 1.6 mm package ? these are pb?free devices typical applications ? battery powered equipment ? portable communication equipment ? cameras, image sensors and camcorders figure 1. typical application schematic ncp186 in en out fb gnd c out 1  f c in 1  f off on v in v out ordering information xdfn8 mx suffix case 711as pin connections see detailed ordering and shipping information in the ordering information section on page 4 of this data sheet. www. onsemi.com (top view) marking diagram xx = specific device code m = date code  = pb?free package xxm   (note: microdot may be in either location) in in en gnd out out n/c fb 1 2 3 4 8 7 6 5
ncp186 www. onsemi.com 2 figure 2. internal block diagram in en out gnd voltage reference and soft?start fb 0.7 v thermal shutdown voltage reference and soft?start 0.7 v thermal shutdown ncp186a (with output discharge) ncp186b (without output discharge) in en out gnd fb table 1. pin function description pin no. xdfn6 pin name description 1 out ldo output pin 2 3 n/c not internally connected. this pin can be tied to the ground plane to improve thermal dissipation. 4 fb feedback input pin 5 gnd ground pin 6 en chip enable input pin (active ?h?) 7 in power supply input pin 8 epad epad it?s recommended to connect the epad to gnd, but leaving it open is also acceptable table 2. absolute maximum ratings rating symbol value unit input voltage (note 1) in ?0.3 to 6.0 v output voltage out ?0.3 to v in + 0.3 v chip enable input en ?0.3 to 6.0 v output current i out internally limited ma maximum junction temperature t j(max) 150 c storage temperature t stg ?55 to 150 c esd capability, human body model (note 2) esd hbm 2000 v esd capability, machine model (note 2) esd mm 200 v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. refer to electrical characteristis and application information for safe operating area. 2. this device series incorporates esd protection and is tested by the following methods: esd human body model tested per aec?q100?002 (eia/jesd22?a114) esd machine model tested per aec?q100?003 (eia/jesd22?a115) latchup current maximum rating tested per jedec standard: jesd78 table 3. thermal characteristics rating symbol value unit thermal resistance, junction?to?air, xdfn8 1.2 mm x 1.6 mm r  ja 111 c/w
ncp186 www. onsemi.com 3 table 4. electrical characteristics v in = v out_nom + 0.5 v or v in = 1.8 v whichever is greater; i out = 1 ma; c in = c out = 1.0  f (effective capacitance) (note 3); v en = 1.2 v; t j = 25 c; unless otherwise noted. the specifications in bold are guaranteed at ?40 c t j 125 c. parameter test conditions symbol min typ max unit operating input voltage v in 1.8 5.5 v output voltage v out_nom + 0.5 v v in 5.5 v, i out = 0 to 1 a, ?40 c t j 85 c v out ?1.0 1.0 % v out_nom + 0.5 v v in 5.5 v, i out = 0 to 1 a, ?40 c t j 125 c ?2.0 1.0 load regulation i out = 1 ma to 1000 ma loadreg 0.7 5.0 mv line regulation v in = v out_nom + 0.5 v to 5.0 v linereg 0.002 0.1 %/v dropout voltage i out = 1 a when v out falls to v out_nom ? 100 mv v out_nom = 1.2 v v do 405 585 mv v out_nom = 1.75 v 180 295 v out_nom = 1.8 v 175 285 v out_nom = 1.85 v 170 280 v out_nom = 2.5 v 120 190 v out_nom = 2.8 v 110 170 v out_nom = 3.0 v 100 160 v out_nom = 3.3 v 95 145 v out_nom = 3.5 v 92 135 v out_nom = 3.9 v 86 130 quiescent current i out = 0 ma i q 90 140  a standby current v en = 0 v i stby 0.1 1.5  a output current limit v out = 90% of v out_nom i ocl 1100 1400 ma output short circuit current v out = 0 v i osc 1100 1400 ma enable input current i en 0.15 0.6  a enable threshold voltage en input voltage ?h? v enh 1.0 v en input voltage ?l? v enl 0.4 power supply rejection ratio v in = v out_nom + 1.0 v, ripple 0.2 vp?p, i out = 30 ma, f = 1 khz psrr 75 db output noise f = 10 hz to 100 khz v n 48  v rms output discharge resistance (ncp186a option only) v in = 5.5 v, v en = 0 v, v out = 1.8 v r ad 34  thermal shutdown temperature temperature rising from t j = +25 c t sd 165 c thermal shutdown hysteresis temperature falling from t sd t sdh 20 c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. effective capacitance, including the effect of dc bias, tolerance and temperature. see the application information section fo r more information.
ncp186 www. onsemi.com 4 ordering information table part number voltage option marking option package shipping ncp186amx120tag 1.2 v fa with active discharge xdfn?8 (pb?free) 711as 3000/tape&reel ncp186amx175tag 1.75 v fc with active discharge NCP186AMX180TAG 1.8 v fd with active discharge ncp186amx185tag 1.85 v fl with active discharge ncp186amx250tag 2.5 v fe with active discharge ncp186amx280tag 2.8 v ff with active discharge ncp186amx300tag 3.0 v fg with active discharge ncp186amx330tag 3.3 v fh with active discharge ncp186amx350tag 3.5 v fj with active discharge ncp186amx390tag 3.9 v fk with active discharge ncp186bmx120tag 1.2 v ha without active discharge xdfn?8 (pb?free) 711as 3000/tape&reel ncp186bmx175tag 1.75 v hc without active discharge ncp186bmx180tag 1.8 v hd without active discharge ncp186bmx185tag 1.85 v hl without active discharge ncp186bmx250tag 2.5 v he without active discharge ncp186bmx280tag 2.8 v hf without active discharge ncp186bmx300tag 3.0 v hg without active discharge ncp186bmx330tag 3.3 v hh without active discharge ncp186bmx350tag 3.5 v hj without active discharge ncp186bmx390tag 3.9 v hk without active discharge
ncp186 www. onsemi.com 5 typical characteristics v in = v out?nom + 0.5 v or v in = 1.8 v, whichever is greater, v en = 1.2 v, i out = 1 ma, c in = c out = 1.0  f, t j = 25 c. figure 3. output voltage vs. temperature figure 4. output voltage vs. temperature temperature ( c) temperature ( c) 120 60 40 20 0 ?20 ?40 1.176 1.179 1.182 1.191 1.203 1.206 1.212 80 60 40 20 0 ?20 ?40 1.764 1.769 1.784 1.789 1.794 figure 5. output voltage vs. temperature temperature ( c) 80 60 40 20 0 ?20 ?40 3.234 3.244 3.264 3.274 3.284 3.324 output voltage (v) output voltage (v) output voltage (v) 1.185 1.188 1.200 1.209 v out?nom = 1.2 v v out?nom = 1.8 v 1.774 1.799 1.804 1.814 3.254 3.294 3.304 3.314 v out?nom = 3.3 v figure 6. output voltage vs. temperature temperature ( c) 80 60 40 20 0 ?20 ?40 3.822 3.832 3.852 3.872 3.882 3.922 3.932 output voltage (v) 3.842 3.892 3.902 3.912 v out?nom = 3.9 v figure 7. line regulation vs. temperature temperature ( c) 80 60 40 20 0 ?20 ?40 ?0.10 ?0.08 ?0.04 ?0.02 0 0.02 0.04 0.10 line regulation (%/v) ?0.06 0.06 0.08 v in = v out?nom + 0.5 v to 5.0 v, v in 1.8 v v out?nom = 1.2 v v out?nom = 1.8 v v out?nom = 3.3 v v out?nom = 3.9 v figure 8. load regulation vs. temperature temperature ( c) 80 60 40 20 0 ?20 ?40 ?5 ?4 ?2 ?1 0 1 4 5 load regulation (mv) ?3 2 3 i out = 1 ma to 1000 ma 80 100 1.194 1.197 100 120 1.779 1.809 100 120 100 120 3.862 100 120 v out?nom = 1.2 v v out?nom = 1.8 v v out?nom = 3.3 v v out?nom = 3.9 v 100 120
ncp186 www. onsemi.com 6 typical characteristics v in = v out?nom + 0.5 v or v in = 1.8 v, whichever is greater, v en = 1.2 v, i out = 1 ma, c in = c out = 1.0  f, t j = 25 c. figure 9. dropout voltage vs. output current figure 10. dropout voltage vs. temperature output current (ma) temperature ( c) 1000 800 600 400 200 0 0 25 50 125 150 200 225 275 80 60 40 20 0 ?20 ?40 0 25 75 100 150 275 figure 11. dropout voltage vs. output current figure 12. dropout voltage vs. temperature output current (ma) temperature ( c) 1000 800 600 400 200 0 0 20 40 60 80 140 80 60 40 20 0 ?20 ?40 0 20 40 60 80 100 figure 13. ground current vs. output current output current (ma) 1000 800 600 400 200 0 0 50 100 150 250 300 400 450 dropout voltage (mv) dropout voltage (mv) dropout voltage (mv) dropout voltage (mv) ground current (  a) 75 100 175 250 v out?nom = 1.8 v v out?nom = 1.8 v 50 175 200 225 100 120 120 140 200 350 t j = 125 c t j = 25 c t j = ?40 c 125 250 v out?nom = 3.3 v t j = 25 c t j = ?40 c v out?nom = 3.3 v i out = 10 ma i out = 200 ma i out = 500 ma i out = 1000 ma i out = 10 ma i out = 200 ma i out = 500 ma i out = 1000 ma 100 120 figure 14. quiescent current vs. temperature temperature ( c) 80 60 40 20 0 ?20 ?40 60 70 80 90 100 110 120 quiescent current (  a) i out = 0 ma t j = 125 c 100 120 v out?nom = 1.8 v t j = 25 c t j = ?40 c t j = 125 c 100 120 v out?nom = 1.2 v v out?nom = 1.8 v v out?nom = 3.3 v v out?nom = 3.9 v
ncp186 www. onsemi.com 7 typical characteristics v in = v out?nom + 0.5 v or v in = 1.8 v, whichever is greater, v en = 1.2 v, i out = 1 ma, c in = c out = 1.0  f, t j = 25 c. figure 15. quiescent current vs. input voltage figure 16. standby current vs. temperature input voltage (v) temperature ( c) 5.5 5.0 4.0 3.5 3.0 2.5 2.0 50 60 70 80 90 100 110 120 80 60 120 40 20 0 ?20 ?40 0 0.1 0.2 0.4 0.6 0.7 0.8 1.0 figure 17. short circuit current vs. temperature figure 18. output current limit vs. temperature temperature ( c) temperature ( c) 120 80 40 0 ?20 ?40 1.1 1.2 1.4 1.5 1.7 1.9 2.0 80 60 40 20 0 ?20 ?40 1.1 1.2 1.4 1.6 1.7 1.8 2.0 figure 19. enable threshold voltage vs. temperature figure 20. enable input current vs. temperature temperature ( c) temperature ( c) 80 60 40 20 0 ?20 ?40 0.4 0.6 0.8 1.0 80 60 40 20 0 ?20 ?40 0 0.1 0.2 0.3 0.4 0.5 0.6 quiescent current (  a) standby current (  a) short circuit current (a) output current limit (a) enable threshold voltage (v) enable input current (  a) 0.5 1.3 1.5 1.9 v out?forced = 0 v 0.5 0.7 0.9 v out?forced = 90% of v out?nom v out?nom = 1.2 v v out?nom = 3.3 v v out?nom = 1.8 v off ?> on on ?> off v out?nom = 1.8 v i out = 0 ma v out?nom = 1.2 v v out?nom = 1.8 v v out?nom = 3.3 v v out?nom = 3.9 v 4.5 t j = 125 c t j = 25 c t j = ?40 c v en = 0 v 100 0.3 0.9 20 60 100 1.3 1.6 1.8 v out?nom = 3.9 v 100 120 v out?nom = 1.2 v v out?nom = 3.3 v v out?nom = 1.8 v v out?nom = 3.9 v v out?nom = 1.2 v v out?nom = 1.8 v v out?nom = 3.3 v v out?nom = 3.9 v 100 120 100 120
ncp186 www. onsemi.com 8 typical characteristics v in = v out?nom + 0.5 v or v in = 1.8 v, whichever is greater, v en = 1.2 v, i out = 1 ma, c in = c out = 1.0  f, t j = 25 c. figure 21. output discharge resistance vs. temperature (ncp186a option only) figure 22. power supply rejection ratio temperature ( c) frequency (hz) 80 60 40 20 0 ?20 ?40 20 25 30 35 40 45 50 10m 1m 100k 10k 1k 100 10 0 10 20 30 50 60 70 90 figure 23. output voltage noise spectral density frequency (hz) 1m 100k 10k 1k 100 10 0 1 2 3 4 5 6 figure 24. turn?on/off ? vin driven (slow) figure 25. turn?on ? vin driven (fast) 1 ms/div 20  s/div output discharge resistance (  ) psrr (db) output voltage noise (nv/ hz) 50 ma/div 40 v out?nom = 1.2 v v out?nom = 1.2 v 1 v/div 1 v/div 100 ma/div i in v in v out i in v in v out 100 120 80 v out?nom = 1.8 v, v in = 2.8 v v out?nom = 3.3 v, v in = 4.3 v c out = 1  f x7r 0805 v out?nom = 1.2 v v out?nom = 3.3 v v out?forced = v out?nom v in = 5.5 v v en = 0 v v out?nom = 1.8 v, v in = 2.8 v v out?nom = 3.9 v, v in = 4.9 v c out = 1  f x7r 0805 integral noise: v out?nom = 1.8 v 10 hz ? 100 khz: 45  vrms 10 hz ? 1 mhz: 61  vrms v out?nom = 3.9 v 10 hz ? 100 khz: 52  vrms 10 hz ? 1 mhz: 68  vrms
ncp186 www. onsemi.com 9 typical characteristics v in = v out?nom + 0.5 v or v in = 1.8 v, whichever is greater, v en = 1.2 v, i out = 1 ma, c in = c out = 1.0  f, t j = 25 c. figure 26. turn?on/off ? vin driven (slow) figure 27. turn?on ? vin driven (fast) 1 ms/div 20  s/div figure 28. turn?on/off ? en driven figure 29. turn?on/off ? en driven 200  s/div 200  s/div figure 30. line transient response 10  s/div 50 ma/div 500 mv/div 10 mv/div v out?nom = 3.9 v i in v in v out 1 v/div v out?nom = 3.9 v 100 ma/div 1 v/div v in v out v out?nom = 1.2 v device with output discharge v en v out 50 ma/div 500 mv/div v out?nom = 1.2 v v in v out 1.2 v t r = t f = 1  s figure 31. line transient response 10  s/div 500 mv/div 10 mv/div i in 1 v/div i in 50 ma/div 500 mv/div 1 v/div v out?nom = 1.8 v device without output discharge v en v out i in 1.8 v 2.8 v v out?nom = 3.9 v v in v out 3.9 v t r = t f = 1  s 4.4 v 5.4 v
ncp186 www. onsemi.com 10 typical characteristics v in = v out?nom + 0.5 v or v in = 1.8 v, whichever is greater, v en = 1.2 v, i out = 1 ma, c in = c out = 1.0  f, t j = 25 c. figure 32. load transient response figure 33. load transient response 10  s/div 10  s/div figure 34.  ja and p d(max) vs. copper area pcb copper area (mm 2 ) 600 500 400 300 200 100 0 60 80 100 120 140 180 200 220  ja , junction?to?ambient thermal resistance ( c/w) 160 0 0.2 0.4 0.6 0.8 1.2 1.6 1.0 p d(max) , maximum power dissipation (w) v out?nom = 1.2 v v in v out 1000 ma 1 ma 1.2 v t r = t f = 1  s 50 mv/div 500 ma/div 50 mv/div 500 ma/div 1 v/div v in v out 1000 ma 3.9 v t r = t f = 1  s i out 1 ma p d(max) , 2 oz cu p d(max) , 1 oz cu  ja , 1 oz cu  ja , 2 oz cu 1.4 1 v/div i out v out?nom = 3.9 v
ncp186 www. onsemi.com 11 applications information general the ncp186 is a high performance 1 a low dropout linear regulator (ldo) delivering excellent noise and dynamic performance. thanks to its adaptive ground current behavior the device consumes only 90  a typ. of quiescent current (no?load condition). the regulator features low noise of 48  v rms , psrr of 75 db at 1 khz and very good line/load transient performance. such excellent dynamic parameters, small dropout voltage and small package size make the device an ideal choice for powering the precision noise sensitive circuitry in portable applications. a logic en input provides on/off control of the output voltage. when the en is low the device consumes as low as 100 na typ. from the in pin. the device is fully protected in case of output overload, output short circuit condition or overheating, assuring a very robust design. input capacitor selection (c in ) input capacitor connected as close as possible is necessary to ensure device stability. the x7r or x5r capacitor should be used for reliable performance over temperature range. the value of the input capacitor should be 1  f or greater for the best dynamic performance. this capacitor will provide a low impedance path for unwanted ac signals or noise modulated onto the input voltage. there is no requirement for the esr of the input capacitor but it is recommended to use ceramic capacitor for its low esr and esl. a good input capacitor will limit the influence of input trace inductance and source resistance during load current changes. output capacitor selection (c out ) the ldo requires an output capacitor connected as close as possible to the output and ground pins. the recommended capacitor value is 1  f, ceramic x7r or x5r type due to its low capacitance variations over the specified temperature range. the ldo is designed to remain stable with minimum effective capacitance of 0.8  f. when selecting the capacitor the changes with temperature, dc bias and package size needs to be taken into account. especially for small package size capacitors such as 0201 the effective capacitance drops rapidly with the applied dc bias voltage (refer the capacitor?s datasheet for details). there is no requirement for the minimum value of equivalent series resistance (esr) for the c out but the maximum value of esr should be less than 0.5  . larger capacitance and lower esr improves the load transient response and high frequency psrr. only ceramic capacitors are recommended, the other types like tantalum capacitors not due to their large esr. enable operation the ldo uses the en pin to enable/disable its operation and to deactivate/activate the output discharge function (a?version only). if the en pin voltage is < 0.4 v the device is disabled and the pass transistor is turned off so there is no current flow between the in and out pins. on a?version the active discharge transistor is active so the output voltage is pulled to gnd through 34  (typ.) resistor. if the en pin voltage is > 1.0 v the device is enabled and regulates the output voltage. the active discharge transistor is turned off. the en pin has internal pull?down current source with value of 150 na typ. which assures the device is turned off when the en pin is unconnected. in case when the en function isn? t required the en pin should be tied directly to in pin. output current limit output current is internally limited to a 1.4 a typ. the ldo will source this current when the output voltage drops down from the nominal output voltage (test condition is v out?nom ? 100mv). if the output voltage is shorted to ground, the short circuit protection will limit the output current to 1.4 a typ. the current limit and short circuit protection will work properly over the whole temperature and input voltage ranges. there is no limitation for the short circuit duration. thermal shutdown when the ldo?s die temperature exceeds the thermal shutdown threshold value the device is internally disabled. the ic will remain in this state until the die temperature decreases by value called thermal shutdown hysteresis. once the ic temperature falls this way the ldo is back enabled. the thermal shutdown feature provides the protection against overheating due to some application failure and it is not intended to be used as a normal working function. power dissipation power dissipation caused by voltage drop across the ldo and by the output current flowing through the device needs to be dissipated out from the chip. the maximum power dissipation is dependent on the pcb layout, number of used cu layers, cu layers thickness and the ambient temperature. the maximum power dissipation can be computed by following equation: p d(max)  t j  t a  ja [w] (eq. 1) where (t j ? t a ) is the temperature difference between the junction and ambient temperatures and ja is the thermal resistance (dependent on the pcb as mentioned above).
ncp186 www. onsemi.com 12 the power dissipated by the ldo for given application conditions can be calculated by the next equation: p d  v in  i gnd   v in  v out   i out [w] (eq. 2) where i gnd is the ldo?s ground current, dependent on the output load current. connecting the exposed pad and n/c pin to a large ground planes helps to dissipate the heat from the chip. the relation of ja and p d(max) to pcb copper area and cu layer thickness could be seen on the figure 34. reverse current the pmos pass transistor has an inherent body diode which will be forward biased in the case when v out > v in . due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. power supply rejection ratio the ldo features very high power supply rejection ratio. the psrr at higher frequencies (in the range above 100 khz) can be tuned by the selection of c out capacitor and proper pcb layout. a simple lc filter could be added to the ldo?s in pin for further psrr improvement. enable turn?on time the enable turn?on time is defined as the time from en assertion to the point in which v out will reach 98% of its nominal value. this time is dependent on various application conditions such as v out?nom , c out and t a . pcb layout recommendations to obtain good transient performance and good regulation characteristics place c in and c out capacitors as close as possible to the device pins and make the pcb traces wide. in order to minimize the solution size, use 0402 or 0201 capacitors size with appropriate effective capacitance. larger copper area connected to the pins will also improve the device thermal resistance. the actual power dissipation can be calculated from the equation above (power dissipation section). exposed pad and n/c pin should be tied to the ground plane for good power dissipation.
ncp186 www. onsemi.com 13 package dimensions notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. coplanarity applies to the exposed pad as well as the terminals. a seating plane 0.10 c a1 2x 2x 0.10 c xdfn8 1.6x1.2, 0.4p case 711as issue a dim a min max millimeters 0.30 0.45 a1 0.00 0.05 b 0.13 0.23 d e l1 d2 pin one identifier 0.08 c 0.10 c a 0.10 c e b b 4 8 8x 1 5 0.05 c mounting footprint* e2 1.60 bsc 1.20 bsc 0.05 ref 1.20 1.40 0.20 0.40 bottom view l 8x dimensions: millimeters 0.35 8x 0.26 8x 1.40 0.40 pitch *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. note 3 l 0.15 0.25 top view b side view recommended 0.44 a d e 8x e/2 e2 d2 1.44 package outline 1 detail b c detail a l1 detail a optional construction l ?? 0.40 bsc 8x l1 8x on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ncp186/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative


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